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sgb02n60 1 rev. 2.3 nov 06 fast igbt in npt-technology ? 75% lower e off compared to previous generation combined with low conduction losses ? short circuit withstand time ? 10 s ? designed for: - motor controls - inverter ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability ? qualified according to jedec 2 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat )150c t j marking package sgb02n60 600v 2a 2.2v 150 c g02n60 pg-to-263-3-2 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current t c = 25 c t c = 100 c i c 6.0 2.9 pulsed collector current, t p limited by t jmax i cpuls 12 turn off safe operating area v ce 600v, t j 150 c - 12 a gate-emitter voltage v ge 20 v avalanche energy, single pulse i c = 2 a, v cc = 50 v, r ge = 25 ? , start at t j = 25 c e as 13 mj short circuit withstand time 1) v ge = 15v, v cc 600v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 30 w operating junction and storage temperature t j , t stg -55...+150 soldering temperature (reflow soldering, msl1) 245 c 2 j-std-020 and jesd-022 1) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to-263-3-2 (d2-pak) (to-263ab)
sgb02n60 2 rev. 2.3 nov 06 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 4.2 thermal resistance, junction ? ambient 1) r thja 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =2a t j =25 c t j =150 c 1.7 - 1.9 2.2 2.4 2.7 gate-emitter threshold voltage v ge(th) i c =150 a, v ce = v ge 3 4 5 v zero gate voltage collector current i ces v ce =600v, v ge =0v t j =25 c t j =150 c - - - - 20 250 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =2a - 1.6 - s dynamic characteristic input capacitance c iss - 142 170 output capacitance c oss - 18 22 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 10 12 pf gate charge q gate v cc =480v, i c =2a v ge =15v - 14 18 nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7 - nh short circuit collector current 2) i c(sc) v ge =15v, t sc 10 s v cc 600v, t j 150 c - 20 - a 1) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for collector connection. pcb is vertical without blown air. 2) allowed number of short circuits: <1000; time between short circuits: >1s.
sgb02n60 3 rev. 2.3 nov 06 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 20 24 rise time t r - 13 16 turn-off delay time t d(off) - 259 311 fall time t f - 52 62 ns turn-on energy e on - 0.036 0.041 turn-off energy e off - 0.028 0.036 total switching energy e ts t j =25 c, v cc =400v, i c =2a, v ge =0/15v, r g =118 ? , l 1) =180nh, c 1) =180pf energy losses include ?tail? and diode reverse recovery. - 0.064 0.078 mj switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 20 24 rise time t r - 14 17 turn-off delay time t d(off) - 287 344 fall time t f - 67 80 ns turn-on energy e on - 0.054 0.062 turn-off energy e off - 0.043 0.056 total switching energy e ts t j =150 c, v cc =400v, i c =2a, v ge =0/15v, r g =118 ? , l 1) =180nh, c 1) =180pf energy losses include ?tail? and diode reverse recovery. - 0.097 0.118 mj 1) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e.
sgb02n60 4 rev. 2.3 nov 06 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 2a 4a 6a 8a 10a 12a 14a 16a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0.1a 1a 10a dc 1ms 200 s 50 s 15 s t p =2 s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 118 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25c 50c 75c 100c 125c 0w 5w 10w 15w 20w 25w 30w 35w i c , collector current 25c 50c 75c 100c 125c 0a 1a 2a 3a 4a 5a 6a 7a t c , case temperature t c , case temperature figure 3. power dissipation (igbt) as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
sgb02n60 5 rev. 2.3 nov 06 i c , collector current 0v 1v 2v 3v 4v 5v 0a 1a 2a 3a 4a 5a 6a 7 a 15v 13v 11v 9v 7v 5v v ge =20v i c , collector current 0v 1v 2v 3v 4v 5v 0a 1a 2a 3a 4a 5a 6a 7a 15v 13v 11v 9v 7v 5v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 0v 2v 4v 6v 8v 10v 0a 1a 2a 3a 4a 5a 6a 7a 8a -55c +150c t j =+25c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 1.0v 1.5v 2.0v 2.5v 3.0v 3.5v 4.0v v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v) i c = 2a i c = 4a
sgb02n60 6 rev. 2.3 nov 06 t , switching times 0a 1a 2a 3a 4a 5a 10ns 100ns t r t d(on) t f t d(off) t , switching times 0 ? 100 ? 200 ? 300 ? 400 ? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 1 1 8 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 2a, dynamic test circuit in figure e) t , switching times 0c 50c 100c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v 5.0v 5.5v typ. min. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 2a, r g = 118 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.15ma)
sgb02n60 7 rev. 2.3 nov 06 e , switching energy losses 0a 1a 2a 3a 4a 5a 0.0mj 0.1mj 0.2mj e on * e off e ts * e , switching energy losses 0 ? 100 ? 200 ? 300 ? 400 ? 0.0mj 0.1mj 0.2mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 1 1 8 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 2a, dynamic test circuit in figure e) e , switching energy losses 0c 50c 100c 150c 0.0mj 0.1mj 0.2mj e ts * e on * e off z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1 s 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t j , junction temperature t p , pulse width figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 2a, r g = 118 ? , dynamic test circuit in figure e) figure 16. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 1.026 0.035 1.3 3.62*10 -3 1.69 4.02*10 -4 0.183 4.21*10 -5
sgb02n60 8 rev. 2.3 nov 06 v ge , gate - emitter voltage 0nc 5nc 10nc 15nc 0v 5v 10v 15v 20v 25v 480v 120v c , capacitance 0v 10v 20v 30v 10pf 100pf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c = 2a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 15v 0 s 5 s 10 s 15 s 20 s 25 i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 20v 0a 10a 20a 30a 40a v ge , gate - emitter voltage v ge , gate - emitter voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce = 600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of gate-emitter voltage ( v ce 600v, t j = 150 c)
sgb02n60 9 rev. 2.3 nov 06 pg-to263-3-2
sgb02n60 10 rev. 2.3 nov 06 figure a. definition of switching times figure b. definition of switching losses p(t) 12 n t(t) j figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =180nh a n d stray capacity c =180pf.
sgb02n60 11 rev. 2.3 nov 06 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 11/30/06. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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